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Overview:
LiNbO3 crystals are widely used as frequency doubling for wavelengths more than 1μm and optical parametric oscillators (OPOs) pumped at 1064 nm as well as quasi-phase-matched (QPM) devices. Due to their large Electro-Optic and Acousto-Optic coefficients, LiNbO3 crystals are the most commonly used material for pockel cells, Q-switches for Nd:YAG, Nd:YLF, Ti:Sapphire lasers, and phase modulators, waveguide substrates, surface acoustic wave (SAW) wafers, etc.
The light propagates in z-axis direction and electrodes are applies to x faces
General Specifications Of LiNbO3 crystals:
| Dimensional Tolerance |
±0.1mm |
| Angle Tolerance |
±0.5deg |
| Surface Quality |
20/10 Scratch and Dig |
| Clear Aperture |
>90% |
| Surface Flatness |
<λ/8@633nm |
| Wavefront Distortion |
<λ/4@633nm |
| Parallelism |
<20 arc seconds |
| Perpendicularity |
<5 arc minutes |
| AR Coating |
R<0.25%@central wavelength |
| Damage Threshold |
>5J/cm2, 20ns, 20Hz, 1064nm |
Standard Products of LiNbO3 crystals:
| PN. |
Material |
Dimension
(mm)
|
Length
(mm)
|
Cut |
End Surface |
Side Surface |
| LNO3315 |
LiNbO3
|
3X3 |
15 |
Z-cut |
AR/AR@1064nm
|
X Face Au Electrodes
|
| LNO4415 |
LiNbO3
|
4X4 |
15 |
Z-cut |
AR/AR@1064nm
|
X Face Au Electrodes
|
| LNO6625 |
LiNbO3
|
6X6 |
25 |
Z-cut |
AR/AR@1064nm
|
X Face Au Electrodes
|
| LNO9925 |
LiNbO3
|
9X9 |
25 |
Z-cut |
AR/AR@1064nm
|
X Face Au Electrodes
|
Physical and Optical Properties of LiNbO3 crystals:
| Crystal Structure |
Trigonal, space group R3c |
| Cell Parameters |
a = 0.515A, c = 13.863A, Z = 6A |
| Melting Point |
1255±5oC |
| Curie Point |
1140±5oC |
| Mohs Hardness |
5 |
| Density |
4.64 g/cm3 |
| Absorption Coefficient |
~ 0.1%/cm@1064nm |
| Solubility |
insoluble in water |
| Relative Dielectric Constant |
eT11/e0: 85
eT33/e0: 29.5 |
| Thermal Expansion Coefficients(@25oC) |
||a, 2.0 x 10-6/K
||c, 2.2 x 10-6/K |
| Thermal Conductivity |
38 W /m /K @ 25oC |
| Transparency Range |
420-5200nm |
| Optical Homogeneity |
~5 x 10-5 /cm |
| Sellmeier Equations( λ in um) |
no2= 4.9048+0.11768/(λ2 - 0.04750) - 0.027169λ2
ne2= 4.5820+0.099169/(λ2- 0.04443) - 0.021950λ2 |
| NLO Coefficients |
d33 = 34.4 pm/V
d31 = d15 = 5.95 pm/V
d22 = 3.07 pm/V |
| Electro-Optic Coefficients |
gT33 = 32 pm/V, gS33 = 31 pm/V
gT31 = 10 pm/V, gS31 = 8.6 pm/V
gT22 = 6.8 pm/V, gS22 = 3.4 pm/V |
| Half-Wave Voltage, DC |
Electrical field ||z, light ⊥z 3.03 KV
Electrical field ||x or y, light || z 4.02 KV |
| Efficiency NLO Coefficients |
deff=5.7pm/V or~14.6xd36(KDP) for frequency doubling 1300nm;
deff=5.3pm/V or~13.6xd36(KDP) for OPO pumped at 1300nm;
deff=17.6pm/V or~45xd36(KDP) for quasi-phase-matched structure; |
| Damage Threshold |
200 MW/cm2 |
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